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Modelling Charged Defects in Non-Cubic Semiconductors for Radiation Effects Studies in Next Generation Materials
Author(s) -
Peter A. Schultz
Publication year - 2018
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/1481589
Subject(s) - supercell , semiconductor , dipole , materials science , charge (physics) , density functional theory , crystal (programming language) , computational physics , engineering physics , condensed matter physics , physics , optoelectronics , computer science , quantum mechanics , thunderstorm , meteorology , programming language

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