Open AccessDevelopment and Industrialization of InGaN/GaN LEDs on Patterned Sapphire Substrates for Low Cost Emitter Architecture
Author(s) -
J. R. Flemish,
Wouter Soer
Publication year - 2015
Language(s) - English
Resource type - Reports
DOI - 10.2172/1238367
Subject(s) - light emitting diode , flip chip , materials science , optoelectronics , sapphire , diode , design for manufacturability , epitaxy , gallium nitride , electronic engineering , nanotechnology , electrical engineering , engineering , optics , laser , layer (electronics) , adhesive , physics