z-logo
open-access-imgOpen Access
Temperature dependence of carrier capture by defects in gallium arsenide
Author(s) -
W.R. Wampler,
Normand A. Modine
Publication year - 2015
Language(s) - English
Resource type - Reports
DOI - 10.2172/1213029
Subject(s) - gallium arsenide , relaxation (psychology) , charge carrier , materials science , phonon , crystallographic defect , condensed matter physics , gallium , optoelectronics , physics , psychology , social psychology , metallurgy

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom