Open AccessDefect reaction network in Si-doped InAs. Numerical predictions.
Author(s) -
Peter A. Schultz
Publication year - 2015
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - Uncategorized
Resource type - Reports
DOI - 10.2172/1182682
Subject(s) - exothermic reaction , silicon , doping , materials science , simple (philosophy) , displacement (psychology) , density functional theory , molecular physics , chemistry , computational chemistry , optoelectronics , physics , thermodynamics , psychology , philosophy , epistemology , psychotherapist
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