Open AccessProgress report of Sandia National Laboratories (SNL) contribu- tion to IAEA CRP F11016 on ?Utilization of ion accelerators for studying and modeling of radiation induced defects in semicon- ductors and insulators? 3rd RCM.
Author(s) -
György Vizkelethy
Publication year - 2014
Language(s) - English
Resource type - Reports
DOI - 10.2172/1172805
Subject(s) - microelectronics , nuclear engineering , semiconductor detector , semiconductor , materials science , engineering physics , radiation damage , nuclear physics , radiation , optoelectronics , physics , detector , engineering , electrical engineering
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