CVD-Based Valence-Mending Passivation for Crystalline-Si Solar Cells
Author(s) -
Meng Tao
Publication year - 2015
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - Uncategorized
Resource type - Reports
DOI - 10.2172/1171391
Subject(s) - passivation , monocrystalline silicon , materials science , grain boundary , silicon , crystalline silicon , solar cell , carrier lifetime , chemical vapor deposition , schottky barrier , valence (chemistry) , metallurgy , nanotechnology , optoelectronics , chemistry , layer (electronics) , microstructure , diode , organic chemistry
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom