Open AccessThe Energetic Neutral Atom Beam Lithography & Epitaxy (ENABLE) Capability at LANL: GaN-related Materials
Author(s) -
Mark A. Hoffbauer
Publication year - 2014
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/1115548
Subject(s) - lithography , extreme ultraviolet lithography , atom (system on chip) , optoelectronics , materials science , epitaxy , molecular beam epitaxy , chemistry , nanotechnology , computer science , layer (electronics) , embedded system
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