Open AccessAnalysis the effect of the third clutch immediate neighborhood (3NN) and inequality of bond length on the performance of edge of a tunnel field-effect transistors based on graphene Nano Strip
Publication year - 2016
Publication title -
scinzer journal of engineering
Language(s) - English
Resource type - Journals
ISSN - 2415-105X
DOI - 10.21634/sje.2.3.720
Subject(s) - graphene , clutch , enhanced data rates for gsm evolution , nano , materials science , field effect transistor , field (mathematics) , nanotechnology , transistor , engineering , composite material , mechanical engineering , mathematics , electrical engineering , telecommunications , voltage , pure mathematics