Open AccessThe Short Channel and Quantum Confinement Effects on Transfer Characteristics of Si NWMOSFET Depending on the Gate Length and Temperature
Author(s) -
Ibrahim Genc,
Semran İpek
Publication year - 2022
Publication title -
iğdır üniversitesi fen bilimleri enstitüsü dergisi (online)
Language(s) - English
Resource type - Journals
ISSN - 2536-4618
DOI - 10.21597/jist.999374
Subject(s) - quantum tunnelling , ballistic conduction , quantum dot , mosfet , materials science , nanowire , optoelectronics , condensed matter physics , scattering , gate voltage , potential well , nanotechnology , electron , voltage , transistor , physics , quantum mechanics