Open AccessVoltage Dependent Barrier Height, Ideality Factor and Surface States in Au/(NiS-PVP)/n-Si (MPS) type Schottky Barrier Diodes
Author(s) -
Mahmut Bucurgat
Publication year - 2021
Publication title -
iğdır üniversitesi fen bilimleri enstitüsü dergisi
Language(s) - English
Resource type - Journals
ISSN - 2536-4618
DOI - 10.21597/jist.810687
Subject(s) - schottky barrier , saturation current , diode , schottky diode , biasing , passivation , semiconductor , materials science , saturation (graph theory) , doping , voltage , chemistry , omega , band gap , analytical chemistry (journal) , equivalent series resistance , optoelectronics , condensed matter physics , electrical engineering , physics , nanotechnology , mathematics , layer (electronics) , combinatorics , chromatography , engineering , quantum mechanics
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