Open AccessInvestigation of the Voltage Dependent Surface States and Their Relaxation Time of the Al/CdZnO/p-Si (MIS) Structure Via Admittance Method
Author(s) -
Esra Erbilen Tanrıkulu
Publication year - 2019
Publication title -
iğdır üniversitesi fen bilimleri enstitüsü dergisi
Language(s) - English
Resource type - Journals
ISSN - 2536-4618
DOI - 10.21597/jist.534345
Subject(s) - admittance , conductance , relaxation (psychology) , analytical chemistry (journal) , voltage , materials science , range (aeronautics) , atomic physics , low frequency , chemistry , condensed matter physics , physics , electrical impedance , psychology , social psychology , chromatography , quantum mechanics , astronomy , composite material
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom