Open AccessMINORITY CARRIERS MOBILITY DETERMINATION IN THE BASE REGION OF N+-P-P+ SILICON SOLAR CELL UNDER EFFECTS OF IRRADIATION FLUX, TEMPERATURE AND MAGNETIC FIELD
Author(s) -
Sada Traore,
Idrissa Gaye,
Oulimata Mballo,
Ibrahima Diatta,
Richard Mane,
Mor Ndiaye,
Mohamed Abderahim El Moujtaba,
Grégoire Sissoko
Publication year - 2021
Publication title -
international journal of advanced research
Language(s) - English
Resource type - Journals
ISSN - 2320-5407
DOI - 10.21474/ijar01/13317
Subject(s) - photocurrent , irradiation , solar cell , magnetic field , silicon , photoconductivity , carrier lifetime , materials science , flux (metallurgy) , electron mobility , atomic physics , analytical chemistry (journal) , chemistry , optoelectronics , physics , nuclear physics , metallurgy , chromatography , quantum mechanics
The aim of this study is to show the influence of temperature on the relative value of the short-circuit photocurrent density obtained from an n+-p-p+silicon solar cell front illuminated with modulated polychromatic light. The solar cell was already subjected to charged particules irradiation flux (Φp) and intensity (kl,) and remained under both magnetic field (B) and temperature (T). Thus, the graphical representation of the relative value of the short-circuit photocurrent density as a function of the square of the magnetic field (B) yields to determine the slope, which is related to the mobility of minority carriers in the base. It is obtained for a back surface field silicon solar cellunder both temperature and irradiation flux of charged particules.
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