Open AccessSYNTHESIS AND CHARACTERIZATION STUDY OF HGXCR2-X S4 COMPOSITE THIN FILMS PREPARED BY CHEMICAL BATH DEPOSITION TECHNIQUE
Author(s) -
H.B. Patil,
Rajendrakumar B. Ahirrao,
Vijay N. Pawar
Publication year - 2021
Publication title -
international journal of advanced research
Language(s) - English
Resource type - Journals
ISSN - 2320-5407
DOI - 10.21474/ijar01/12762
Subject(s) - thin film , chemical bath deposition , materials science , scanning electron microscope , deposition (geology) , electrical resistivity and conductivity , substrate (aquarium) , composite number , ternary operation , seebeck coefficient , analytical chemistry (journal) , diffraction , band gap , ternary compound , composite material , optics , nanotechnology , optoelectronics , chemistry , inorganic chemistry , electrical engineering , oceanography , computer science , engineering , biology , thermal conductivity , paleontology , chromatography , programming language , physics , sediment , geology
The ternary thin films of composite HgxCr2-xS4 (x = 0.6) have been deposited by simple chemical bath deposition (CBD) technique on glass substrate. The thin films have been deposited at optimized conditions pH at 10 0.1, bath temperature 650C, deposition time 120 minutes. The films were uniform and adherent to glass substrates. They were characterized by structural, optical, and electrical measurement techniques. According to their X-ray diffraction patterns HgxCr2-xS4(x = 0.6) films are crystalline with band gap of 2.4 eV. Scanning electron micrographs showed that the substrates were well covered with films no cracks or pinholes were observed. The electrical resistivity of the films is found to be 1.3703 x 103 Ω-cm to 2.1243 x 103 Ω-cm at temperature range 3030k to 4230K. According to thermoelectric power measurements HgxCr2-xS4(x = 0.6) thin films are of n-type nature.