Design and Analysis of a Dual Material Triple Gate TFET with the Pocket Doping for the Performance Enhancement | Zendy

Rahul Gupta | Zendy; Mamta Khosla | Zendy; Girish Wadhwa | Zendy

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Design and Analysis of a Dual Material Triple Gate TFET with the Pocket Doping for the Performance Enhancement

Author(s) -

Rahul Gupta,

Mamta Khosla,

Girish Wadhwa

Publication year - 2021

Publication title -

aijr proceedings

Language(s) - English

Resource type - Conference proceedings

ISSN - 2582-3922

DOI - 10.21467/proceedings.114.69

Subject(s) - doping , figure of merit , optoelectronics , performance enhancement , materials science , work function , subthreshold conduction , logic gate , dual (grammatical number) , work (physics) , computer science , nanotechnology , electronic engineering , electrical engineering , transistor , physics , engineering , algorithm , medicine , layer (electronics) , voltage , physical medicine and rehabilitation , art , literature , thermodynamics

In this investigated work, we have analysed the miscellaneous figure of merit for Double metal Triple gate TFET. Various techniques have been utilized to improve the ON-state driven current in the drain by doing a comprehensive analysis. Different techniques are examined and correlated by using the TCAD Silvaco tool to get excellent ON current. Further work function engineering has been done in the optimized DMTG-TFET to increase its performance and finally, we introduce pocket doping that increases the ON current (2.34×10-3) and also ION/IOFF ratio (4.36×1014) with subthreshold (SS) of 25.8mV/decade. The pocket doped DMTG-TFET adequately suppress the ambipolarity and endeavour about 20 times higher ION as compared to conventional DMTG-TFET.

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