Open AccessA Literature Survey on Tunnel Field Effect Transistors
Author(s) -
Soumya Sen,
Ashish Raman,
Mamta Khosla
Publication year - 2021
Publication title -
aijr proceedings
Language(s) - English
Resource type - Conference proceedings
ISSN - 2582-3922
DOI - 10.21467/proceedings.114.65
Subject(s) - subthreshold swing , tunnel field effect transistor , quantum tunnelling , transistor , diode , subthreshold slope , optoelectronics , field effect transistor , mosfet , materials science , doping , subthreshold conduction , current (fluid) , channel (broadcasting) , electrical engineering , engineering physics , physics , engineering , voltage
TFET or Tunnel Field Effect Transistor in recent times has been the center of attraction of vast number of researcher’s despite of having minute subthreshold slope and excessive Ion/Ioff ratio. It is known that TFETs are much more immune to short-channel effects and fluctuations of random dopants in comparison to their MOSFET counterparts. TFETs are actually gated p-i-n diodes having tunneling current flowing between source and channel bands. In this paper deep rooted literature review has been done scanning each and every aspects of TFET including the variations of performance with different parameters. The paper finally gives a picture on the recent progress of TFET in different aspects such as from subthreshold swing to a significantly lower leakage current and high on current .For the simulation curves Nanohub.org was used as a tool. Lastly different types of TFET in respect of doping to symmetry and also gates are compared.