Open AccessA Temperature-Dependent Threshold Voltage Model for SiGe Source/Drain Si–NT JLFET
Author(s) -
Anchal Thakur,
Rohit Dhiman
Publication year - 2021
Publication title -
aijr proceedings
Language(s) - English
Resource type - Conference proceedings
ISSN - 2582-3922
DOI - 10.21467/proceedings.114.59
Subject(s) - threshold voltage , materials science , voltage , optoelectronics , silicon , drain induced barrier lowering , silicon germanium , electric field , reverse short channel effect , transistor , negative bias temperature instability , field effect transistor , condensed matter physics , electrical engineering , physics , engineering , quantum mechanics
In this paper, we investigate the impact of temperature on threshold voltage in the SiGe source/drain silicon-nanotube junctionless field effect transistor (NT JLFET). A threshold voltage model has been derived with inclusion of temperature for presented device. It is found that when the temperature increases from T = 300 K, T = 400 K, and T = 500 K, the strain produced by the SiGe source/drain on channel has been relaxed. However, the elevated temperature decreases the potential and the electric field in channel due to increases in intrinsic carrier concentration which further shifts the Fermi level towards the band gap. It has been evaluating that the threshold voltage roll-off and the short channel effects increases due to increases in temperature. The numerical results of threshold voltage model have been well compared with results of 2-D technology computer aided design (TCAD) simulations.