Open AccessExcitonic States and Related Optical Susceptibility in InN/AlN Quantum Well Under the Effects of the Well Size and Impurity Position
Author(s) -
Fathallah Jabouti,
Haddou El Ghazi,
Redouane En-nadir,
Izeddine Zorkani,
Anouar Jorio
Publication year - 2021
Publication title -
advanced nano research
Language(s) - English
Resource type - Journals
ISSN - 2581-5164
DOI - 10.21467/anr.4.1.1-9
Subject(s) - exciton , photoluminescence , condensed matter physics , impurity , quantum well , valence (chemistry) , anderson impurity model , binding energy , position (finance) , effective mass (spring–mass system) , electron , bound state , physics , atomic physics , quantum mechanics , optics , laser , finance , economics
Based on the finite difference method, linear optical susceptibility, photoluminescence peak and binding energies of three first states of an exciton trapped by a positive charge donor-impurity ( ) confined in InN/AlN quantum well are investigated in terms of well size and impurity position. The electron, heavy hole free and bound excitons allowed eigen-values and corresponding eigen-functions are obtained numerically by solving one-dimensional time-independent Schrödinger equation. Within the parabolic band and effective mass approximations, the calculations are made considering the coupling of the electron in the n-th conduction subband and the heavy hole in the m-th valence subband under the impacts of the well size and impurity position. The obtained results show clearly that the energy, binding energy and photoluminescence peak energy show a decreasing behavior according to well size for both free and bound cases. Moreover, the optical susceptibility associated to exciton transition is strongly red-shift (blue-shifted) with enhancing the well size (impurity position).