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Anther‐Derived Dihaploids for Lodging Improvement in Tobacco
Author(s) -
Menchey E. K.,
Aycock M. K.
Publication year - 1998
Publication title -
crop science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.76
H-Index - 147
eISSN - 1435-0653
pISSN - 0011-183X
DOI - 10.2135/cropsci1998.0011183x003800030013x
Subject(s) - biology , nicotiana tabacum , heritability , population , stamen , horticulture , greenhouse , botany , agronomy , demography , genetics , pollen , sociology , gene
Lodging due to severe weather conditions is observed in crops each year. A 2‐yr study was conducted to determine the effectiveness of anther‐derived dihaploids for improving lodging resistance, and to examine certain morphological traits which may contribute to lodging in Maryland tobacco ( Nicotiana tabacum L.). Forty‐five and 35 dihaploid lines were derived from F 1 plants of ‘MD 201’ ✕ ‘Catterton’ (Population 1) and MD 201 ✕ ‘NC 13’ (Population 2) crosses, respectively, using standard anther and midvein culture techniques. Mature plants were subjected to artificially produced wind, and evaluated by a severity rating based on the degree of lean from the vertical position. Significant variation amongth e dihaploid lines was observed for severity rating over the 2 yr. Heritability values for Populations 1 and 2 were 0.61 and 0.64, respectively. Based on severity ratings from the first year field study, five good and five poor dihaploid lines in Population 2 were evaluated in a 2‐yr greenhouse study for top and root fresh weights and top/root ratio (TRR). Significant variation was observed among the 10 dihaploid lines for TRR only; however, the five lines selected for good lodging performance had larger root weights and smaller TRR than the five lines selected for poor lodging performance. Results obtained from these field and greenhouse studies suggest that the development of dihaploid lines with low severity ratings, larger roots, and smaller TRRis possible, and should provide superior genetic material with a good level of lodging resistance.

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