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Relationship of Stalk Morphology and Chemical Composition to Lodging Resistance in Sorghum 1
Author(s) -
Esechie H. A.,
Maranville J. W.,
Ross W. M.
Publication year - 1977
Publication title -
crop science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.76
H-Index - 147
eISSN - 1435-0653
pISSN - 0011-183X
DOI - 10.2135/cropsci1977.0011183x001700040032x
Subject(s) - stalk , biology , peduncle (anatomy) , sorghum , plant stem , sorghum bicolor , agronomy , perennial plant , sweet sorghum , habit , resistance (ecology) , horticulture , psychology , psychotherapist
Lodging reduces grain yields significantly in most grain crops. Therefore, selection of lodging‐resistant lines might alleviate the lodging problem. Several factors are associated with lodging resistance, but attempts to quantitate these factors are either very few or lacking for grain sorghum ( Sorghum bicolor (L.) Moench). Morphological and stalk composition measurements were made in 2 consecutive years using 30 lodging‐resistant and 30 lodging‐susceptible lines in order to quantify these factors and to assess their value as an index of selection. Lodging resistance was associated with larger diameters of basal internodes and peduncles, shorter peduncles, shorter plant height, higher weight of 5‐cm basal and peduncle stalk sections, and a thicker rind. When external force was artificially applied in the field, those lines classified as lodging resistant required more force to effect stalk failure. Lodging‐resistant sorghums contained higher total nonstructural carbohydrates (TNC) and lower stalk potassium and protein concentrations. The resistant types also appeared to be more perennial in habit and thus were resistant to senescence of cell tissues after freezing. High TNC was directly associated with resistance to post‐freeze senescence and/or with longer maturity, and indirectly with lodging. Resistant types were generally later maturing, and the results indicated that resistance probably can be obtained without sacrificing yield.