
Investigation of degradation of GaN based semiconductor structures
Author(s) -
S. G. Ekhanin,
Radioeleсtronics,
Alexander Tomashevich
Publication year - 2017
Publication title -
doklady tomskogo gosudarstvennogo universiteta sistem upravleniâ i radioèlektroniki
Language(s) - English
Resource type - Journals
ISSN - 1818-0442
DOI - 10.21293/1818-0442-2017-20-4-23-25
Subject(s) - degradation (telecommunications) , semiconductor , materials science , optoelectronics , engineering physics , electronic engineering , engineering