Resistive Random Access Memory (ReRAM)
Author(s) -
Muthu Dayalan
Publication year - 2019
Publication title -
international journal of research and engineering
Language(s) - Uncategorized
Resource type - Journals
eISSN - 2348-7860
pISSN - 2348-7852
DOI - 10.21276/ijre.2019.6.3.2
Subject(s) - resistive random access memory , reliability (semiconductor) , data retention , random access , random access memory , computer science , non volatile memory , electrical engineering , voltage , engineering , electronic engineering , computer hardware , power (physics) , operating system , physics , quantum mechanics
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