z-logo
open-access-imgOpen Access
Resistive Random Access Memory (ReRAM)
Author(s) -
Muthu Dayalan
Publication year - 2019
Publication title -
international journal of research and engineering
Language(s) - Uncategorized
Resource type - Journals
eISSN - 2348-7860
pISSN - 2348-7852
DOI - 10.21276/ijre.2019.6.3.2
Subject(s) - resistive random access memory , reliability (semiconductor) , data retention , random access , random access memory , computer science , non volatile memory , electrical engineering , voltage , engineering , electronic engineering , computer hardware , power (physics) , operating system , physics , quantum mechanics

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom