Open AccessElectrical behavior and Optical Properties of Copper oxide thin Films
Author(s) -
Isam M. Ibrahim,
Muhammad O. Salman,
Ahmed Ahmed
Publication year - 2011
Publication title -
mağallaẗ baġdād li-l-ʿulūm
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.167
H-Index - 6
eISSN - 2411-7986
pISSN - 2078-8665
DOI - 10.21123/bsj.8.2.638-645
Subject(s) - materials science , crystallite , copper , conductivity , electrical resistivity and conductivity , activation energy , substrate (aquarium) , oxide , band gap , semiconductor , copper oxide , chemical engineering , optoelectronics , chemistry , metallurgy , electrical engineering , oceanography , geology , engineering
In this work the structural, electrical and optical Properties of CuO semiconductor films had been studied, which prepared at three thickness (100, 200 and 500 nm) by spray pyrolysis method at 573K substrate temperatures on glass substrates from 0.2M CuCl2•2H2O dissolved in alcohol. Structural Properties shows that the films have only a polycrystalline CuO phase with preferential orientation in the (111) direction, the dc conductivity shows that all films have two activation energies, Ea1 (0.45-0.66 eV) and Ea2 (0.055-.0185 eV), CuO films have CBH (Correlated Barrier Hopping) mechanism for ac-conductivity. The energy gap between (1.5-1.85 eV).