Open AccessEffect of Annealing Temperature on The Some Electrical Properties of InSb:Bi Thin Films
Author(s) -
Zeinab Jassim Shanan
Publication year - 2010
Publication title -
mağallaẗ baġdād li-l-ʿulūm
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.167
H-Index - 6
eISSN - 2411-7986
pISSN - 2078-8665
DOI - 10.21123/bsj.7.4.1416-1420
Subject(s) - annealing (glass) , seebeck coefficient , materials science , activation energy , hall effect , thermoelectric effect , electrical resistivity and conductivity , alloy , conductivity , analytical chemistry (journal) , optoelectronics , thermal conductivity , metallurgy , composite material , chemistry , electrical engineering , thermodynamics , physics , engineering , chromatography
InSb alloy was prepared then InSb:Bi films have been prepared successfully by thermal evaporation technique on glass substrate at Ts=423K. The variation of activation energies(Ea1,Ea2)of d.c conductivity with annealing temperature (303, 373, 423, 473, 523 and 573)K were measured, it is found that its values increases with increasing annealing temperature. To show the type of the films, the Hall and thermoelectric power were measured. The activation energy of the thermoelectric power is much smaller than for d.c conductivity and increases with increasing annealing temperature .The mobility and carrier concentration has been measured also.