Open AccessStudies on solution – growth thin films of CdS : Zn for photovoltaic application
Author(s) -
Selma M. H. Al Jawad
Publication year - 2009
Publication title -
mağallaẗ baġdād li-l-ʿulūm
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.167
H-Index - 6
eISSN - 2411-7986
pISSN - 2078-8665
DOI - 10.21123/bsj.6.1.135-140
Subject(s) - zinc , materials science , thin film , doping , heterojunction , band gap , photovoltaic system , electrical resistivity and conductivity , optoelectronics , chemical engineering , nanotechnology , metallurgy , electrical engineering , engineering
Structural, optical, and electrical properties of thin films of CdS : Zn prepared by the solution – growth technique are reported as a function of zinc concentration. CdS are window layers influencing the photovoltaic response of CIS solar cells. The zinc doping concentration was varied from 0.05 to 0.5 wt %, zinc doping apparently increase the band gap and lowers the resistivity. All beneficial optical properties of chemically deposited CdS thin films for application as window material in heterojunction optoelectronic devices are retained. Heat treatment in air at 400 °C for 1h modify crystalline structure, optical, and electrical properties of solution growth deposited CdS : Zn films.