Open AccessStudy the effect of thickness and annealing temperature on the Electrical Properties of CdTe thin Films
Author(s) -
Baghdad Science Journal
Publication year - 2008
Publication title -
mağallaẗ baġdād li-l-ʿulūm
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.167
H-Index - 6
eISSN - 2411-7986
pISSN - 2078-8665
DOI - 10.21123/bsj.5.3.449-453
Subject(s) - annealing (glass) , cadmium telluride photovoltaics , materials science , crystallite , electrical resistivity and conductivity , thin film , conductivity , analytical chemistry (journal) , composite material , optoelectronics , metallurgy , nanotechnology , chemistry , electrical engineering , chromatography , engineering
The electrical properties of polycrystalline cadmium telluride thin films of different thickness (200,300,400)nm deposited by thermal evaporation onto glass substrates at room temperature and treated at different annealing temperature (373, 423, 473) K are reported. Conductivity measurements have been showed that the conductivity increases from 5.69X10-5 to 0.0011, 0.0001 (?.cm)-1 when the film thickness and annealing temperature increase respectively. This increasing in ?d.c due to increasing the carrier concentration which result from the excess free Te in these films.