Open AccessInfluence of Laser Irradiation Times on Properties of Porous Silicon
Author(s) -
Baghdad Science Journal
Publication year - 2007
Publication title -
mağallaẗ baġdād li-l-ʿulūm
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.167
H-Index - 6
eISSN - 2411-7986
pISSN - 2078-8665
DOI - 10.21123/bsj.4.4.640-646
Subject(s) - materials science , irradiation , porous silicon , etching (microfabrication) , scanning electron microscope , porosity , gravimetric analysis , silicon , layer (electronics) , laser , micrograph , diode , wavelength , composite material , optoelectronics , optics , chemistry , physics , organic chemistry , nuclear physics
Porous silicon (P-Si) has been produced in this work by photoelectrochemical (PEC) etching process. The irradiation has been achieved using diode laser of (2 W) power and 810 nm wavelength. The influence of various irradiation times on the properties of P-Si material such as P-Si layer thickness, surface aspect, pore diameter and the thickness of walls between pores as well as porosity and etching rate was investigated by depending on the scanning electron micrograph (SEM) technique and gravimetric measurements.