Open AccessSynthesis, Characteristics and Study the Photoluminscience of the CdSxSe1-x Nanocrystaline Thin Film
Author(s) -
Jassim
Publication year - 2020
Publication title -
mağallaẗ baġdād li-l-ʿulūm
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.167
H-Index - 6
eISSN - 2411-7986
pISSN - 2078-8665
DOI - 10.21123/bsj.2020.17.1.0116
Subject(s) - photoluminescence , semiconductor , characterization (materials science) , materials science , diffraction , scanning electron microscope , thin film , spectroscopy , analytical chemistry (journal) , excitation wavelength , ultraviolet , field emission microscopy , optoelectronics , wavelength , nanotechnology , chemistry , optics , physics , chromatography , quantum mechanics , composite material
The present work focuses on the changing of the structural characteristics of the grown materials through different material characterization methods. Semiconductor CdSxSe 1-x nano crystallines have been synthesized by chemical vapor depostion. (X- ray Diffraction; XRD), (Field Emission Scanning Electron Microscopy; FESEM), measured the characterization of Semiconductor CdSxSe1-x nano crystallines. The optical properties of semiconductor CdSxSe1-x nanocrystallines have been studied by the photoluminescence (PL) (He-Cd pulsed ultraviolet laser at 325nm excitation wavelength) at room temperature. The results showed the change rule of photoluminsence peak at different S/Se ratios according to the photoluminsence spectral analysis technology. The photuminscence peak can be continuously modulated between (500- 650) nm, so the tunable emission of the materials in the present work have novle applications in the area of bioscience and spectroscopy, etc.