Open AccessSynthesis and Fabrication of In2O3: CdO Nanoparticles for NO2 Gas Sensor
Author(s) -
Baghdad Science Journal
Publication year - 2018
Publication title -
mağallaẗ baġdād li-l-ʿulūm
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.167
H-Index - 6
eISSN - 2411-7986
pISSN - 2078-8665
DOI - 10.21123/bsj.15.3.292-299
Subject(s) - wafer , etching (microfabrication) , materials science , porous silicon , fabrication , nanoparticle , analytical chemistry (journal) , nanotechnology , semiconductor , porosity , silicon , chemical engineering , optoelectronics , chemistry , composite material , chromatography , medicine , alternative medicine , layer (electronics) , pathology , engineering
The physical and morphological characteristics of porous silicon (PS) synthesized via gas sensor was assessed by electrochemical etching for a Si wafer in diluted HF acid in water (1:4) at different etching times and different currents. The morphology for PS wafers by AFM show that the average pore diameter varies from 48.63 to 72.54 nm with increasing etching time from 5 to 15min and from 72.54 to 51.37nm with increasing current from 10 to 30 mA. From the study, it was found that the gas sensitivity of In2O3: CdO semiconductor, against NO2 gas, directly correlated to the nanoparticles size, and its sensitivity increases with increasing operating temperature.