Open AccessAnalytical Study of near Mobility Edge Density of States of Hydrogenated Amorphous Silicon
Author(s) -
Abdullah Ibrahim Abbo
Publication year - 2014
Publication title -
mağallaẗ baġdād li-l-ʿulūm
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.167
H-Index - 6
eISSN - 2411-7986
pISSN - 2078-8665
DOI - 10.21123/bsj.11.3.1243-1249
Subject(s) - density of states , condensed matter physics , amorphous silicon , materials science , conduction band , power law , silicon , semiconductor , amorphous semiconductors , amorphous solid , valence (chemistry) , quasi fermi level , crystalline silicon , valence band , band gap , chemistry , physics , mathematics , crystallography , electron , quantum mechanics , optoelectronics , statistics
Experimental results for the density of states of hydrogenated amorphous silicon due to Jackson et al near the valence and conduction band edges were analyzed using Levenberg-Marquardt nonlinear fitting method. It is found that the density of states of the valence band and the conduction band can be fitted to a simple power law, with a power index 0.60 near the valence band edge, and 0.55 near the conduction band edge. These results indicate a modest but noticeable deviation from the square root law (power index=0.5) which is found in crystalline semiconductors. Analysis of Jackson et al density of states integral J(E) data over about (1.4 eV) of photon energy range, showed a significant fit to a simple power law with a power index of 2.11 close to that predicted from the density of states fitting results 2.15