Open Access'I-V Characteristic and Crystal Structural Of a-As/c-Si Heterojunctions
Author(s) -
Baghdad Science Journal
Publication year - 2014
Publication title -
mağallaẗ baġdād li-l-ʿulūm
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.167
H-Index - 6
eISSN - 2411-7986
pISSN - 2078-8665
DOI - 10.21123/bsj.11.2.621-624
Subject(s) - annealing (glass) , heterojunction , materials science , saturation current , saturation (graph theory) , biasing , analytical chemistry (journal) , crystal (programming language) , condensed matter physics , optoelectronics , voltage , chemistry , mathematics , electrical engineering , physics , composite material , combinatorics , chromatography , computer science , programming language , engineering
In this research the a-As flims have been prepared by thermal evaporation with thickness 250 nm and rata of deposition r_d(1.04nm/sec) as function to annealing temperature (373 and 473K), from XRD analysis we can see that the degree of crystalline increase with T_a, and I-V characteristic for dark and illumination shows that forward bias current varieties approximately exponentially with voltage bias. Also we found that the quality factor and saturation current dependence on annealing temperatures.