Open AccessEvaluation of Laser Doping of Si from MCLT Measurement
Author(s) -
Baghdad Science Journal
Publication year - 2004
Publication title -
mağallaẗ baġdād li-l-ʿulūm
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.167
H-Index - 6
eISSN - 2411-7986
pISSN - 2078-8665
DOI - 10.21123/bsj.1.2.321-325
Subject(s) - doping , materials science , laser , optoelectronics , voltage , analytical chemistry (journal) , optics , chemistry , electrical engineering , physics , chromatography , engineering
The measurement of minority carrier lifetime (MCLT) ofp-n Si fabricated with aid of laser doping technique was reported. The measurement is achieved by using open circuit voltage decay (OCVD) technique. The experiment data confirms that the value of MCLT and proftle of Voc decay were very sensitive to the doping laser energy.