Open Accessstudy Of Optical Properties Of Copper-Doped Cds Thin Films
Author(s) -
Baghdad Science Journal
Publication year - 2004
Publication title -
mağallaẗ baġdād li-l-ʿulūm
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.167
H-Index - 6
eISSN - 2411-7986
pISSN - 2078-8665
DOI - 10.21123/bsj.1.2.264-270
Subject(s) - irradiation , doping , materials science , vacancy defect , copper , substrate (aquarium) , atom (system on chip) , absorption edge , thin film , absorption (acoustics) , wavelength , enhanced data rates for gsm evolution , analytical chemistry (journal) , optoelectronics , crystallography , nanotechnology , chemistry , metallurgy , composite material , band gap , telecommunications , physics , oceanography , chromatography , computer science , nuclear physics , embedded system , geology
Thin films of CdS:Cu were deposited onto glass substrate temperature 400 °c. The optieal properties have been studied for Cds doped with (1,3, 8) wt% of Cu before and after Gamma irradiation. It was found that the irradiation caused an ( Frenkel defects) where the atom is displaced from its original site leaving vacancy and forming on interstitial atom. It was found the irradiation caused an absorption edge shifting towards long wavelength as a result of the increasing of Cu concentration.