Open AccessDEPTH MEASUREMENT OF DISRUPTED LAYER ON SILICON WAFER SURFACE USING AUGER SPECTROSCOPY METHOD
Author(s) -
Виталий Александрович Солодуха,
Anatoly Belous,
Г. Г. Чигирь
Publication year - 2016
Publication title -
nauka i tehnika
Language(s) - English
Resource type - Journals
eISSN - 2414-0392
pISSN - 2227-1031
DOI - 10.21122/2227-1031-2016-15-4-329-334
Subject(s) - auger electron spectroscopy , auger , silicon , wafer , sputtering , analytical chemistry (journal) , materials science , auger effect , layer (electronics) , chemistry , atomic physics , optoelectronics , thin film , nanotechnology , physics , chromatography , nuclear physics