Open AccessControl of Electrical and Optical Parameters of Humidity Sensors Active Elements Based on Tin Oxides Films with Variable Composition
Author(s) -
Д. B. Адамчук,
В. К. Ксеневич
Publication year - 2019
Publication title -
pribory i metody izmerenij
Language(s) - English
Resource type - Journals
eISSN - 2414-0473
pISSN - 2220-9506
DOI - 10.21122/2220-9506-2019-10-2-138-150
Subject(s) - materials science , sputtering , tin , annealing (glass) , transmittance , electrical resistivity and conductivity , tin dioxide , sputter deposition , argon , thin film , optoelectronics , analytical chemistry (journal) , composite material , nanotechnology , metallurgy , chemistry , engineering , organic chemistry , chromatography , electrical engineering
The aim of this work is development of technique for synthesis of tin oxides films with various stoichiometric composition, characterized by high electrical conductivity and light transmittance in the UV and visible range of the electromagnetic spectrum, for their further application as humidity and gas sensors, as well as electrodes for electro-and photocatalytic converters. Nonstoichiometric SnO/SnO 2 /SnO 2− δ films were synthesized by reactive magnetron sputtering of tin onto glass substrates in argon plasma with oxygen addition and with subsequent thermal oxidation of the formed layers in air. To change the structural, optical, and electrical properties of the films and to find out the optimal synthesis parameters, the oxygen content during the deposition process and the annealing temperature in air were varied in the range of 0–2 vol. % and of 200–450 °C, respectively. The characterization of the films was carried out using a 4-probe method for measuring the electrical resistance, X-ray diffraction, and optical spectroscopy of light transmission. As a result of a comprehensive analysis of the structural, optical and electrical properties of the films, it was found that the optimal synthesis parameters to obtain the most transparent and conductive coatings promising for use as humidity, gas sensors and in photovoltaic devices are the following: oxygen content in argon plasma during sputtering process is ≈ 0,8–1,2 vol. %, the annealing temperature in air is ≈ 350–375 °C. In this case a polycrystalline film with high electrical conductivity and high transmittance in the visible and UV regions of the electromagnetic spectrum with prevailing of tin dioxide phase with structural defects (oxygen vacancies) is formed.