Open AccessGermanium-doped silicon (sige) as a material for the manufacture of power semiconductor devices resistant to secondary cosmic radiation
Author(s) -
Сергей Витальевич Быткин,
Татьяна Владимировна Критская
Publication year - 2019
Publication title -
vìsnik nacìonalʹnogo tehnìčnogo unìversitetu "hpì". serìâ: električnì mašini ta elektromehanìčne peretvorennâ energìï
Language(s) - English
Resource type - Journals
ISSN - 2409-9295
DOI - 10.20998/2409-9295.2019.20.14
Subject(s) - germanium , materials science , optoelectronics , silicon , semiconductor , doping , semiconductor device , radiation , engineering physics , converters , degradation (telecommunications) , ionizing radiation , irradiation , power (physics) , electrical engineering , nanotechnology , optics , physics , engineering , nuclear physics , layer (electronics) , quantum mechanics