Open AccessSynthesis and Characterization of C, SnO2, and C+SnO2 Materials through Resistance Measurement, UV-Visible Spectroscopy, and X-Ray Diffraction
Author(s) -
Nabila Rahmasari,
Azka Fathia,
Wipsar Sunu Brams Dwandaru
Publication year - 2018
Publication title -
jurnal teras fisika
Language(s) - English
Resource type - Journals
ISSN - 2615-1219
DOI - 10.20884/1.jtf.2018.1.1.565
Subject(s) - thin film , crystallinity , materials science , amorphous solid , analytical chemistry (journal) , tin oxide , diffraction , spectroscopy , carbon film , crystal (programming language) , optics , crystallography , optoelectronics , composite material , nanotechnology , chemistry , doping , physics , programming language , chromatography , quantum mechanics , computer science
The objectives of this study are i) to determine an electrical property, especially resistance, of carbon (C), tin oxide (SnO2), and C+SnO2 thin films. ii) to determine the optical property of C, SnO2 and C+SnO2 thin films based on UV-visible spectroscopy (UV-Vis). and iii) to determine the crystallinity of C, SnO2 and C+SnO2 thin films based on X-ray diffraction (XRD). The results show different physical characteristics from the three samples of the thin film layers. The result on the resistance measurement shows that C thin film has the lowest resistance, followed by SnO2, and C+SnO2 thin films with resistance values of 1.0769 mΩ, 1.0774 mΩ, and 3.8875 mΩ, respectively. The UV-Vis results show a peak for each of the thin film at 256 nm, 257 nm, and 258 nm for C, SnO2, and C+SnO2, respectively, which is in the UV area. The XRD results show that the C and SnO2 thin layers are amorphous while C+SnO2 thin layer is crystal