Open AccessThe Effect of Gamma Rays on the Main Static Characteristics of SiGe Transistors
Author(s) -
О. В. Дворников,
V. L. Dziatlau,
Н. Н. Прокопенко,
Vladimir A. Tchekhovski
Publication year - 2017
Publication title -
vìsnik nacìonalʹnogo tehnìčnogo unìversitetu ukraïni "kììvsʹkij polìtehnìčnij ìnstitut". serìâ radìotehnìka, radìoaparatobuduvannâ/vìsnik nacìonalʹnogo tehnìčnogo unìversitetu ukraïni "kìïvsʹkij polìtehnìčnij ìnstitut". serìâ radìotehnìka, radìoaparatobuduvannâ
Language(s) - English
Resource type - Journals
eISSN - 2310-0397
pISSN - 2310-0389
DOI - 10.20535/radap.2017.71.40-45
Subject(s) - common emitter , optoelectronics , transistor , materials science , current (fluid) , base (topology) , bipolar junction transistor , heterojunction bipolar transistor , voltage , electrical engineering , engineering , mathematics , mathematical analysis