Open AccessRadiation-heat treatment of high-power bipolar transistors with anti-multiplication layer
Author(s) -
A. V. Borysov,
V. A. Husev,
D. H. Murzyn
Publication year - 2012
Publication title -
èlektronika i svâzʹ
Language(s) - English
Resource type - Journals
eISSN - 2312-1807
pISSN - 1811-4512
DOI - 10.20535/2312-1807.2012.17.5.217938
Subject(s) - bipolar junction transistor , materials science , optoelectronics , transistor , radiation , layer (electronics) , irradiation , power (physics) , multiplication (music) , voltage , electrical engineering , optics , nanotechnology , physics , engineering , nuclear physics , acoustics , quantum mechanics