Open AccessFeatures of pore formation of semiconductors by example zinc selenide and indium phosphide
Author(s) -
В. В. Кідалов,
O.V. Marakhovskyi,
Ya.O. Cychikova,
H.O. Sukach
Publication year - 2012
Publication title -
èlektronika i svâzʹ
Language(s) - English
Resource type - Journals
eISSN - 2312-1807
pISSN - 1811-4512
DOI - 10.20535/2312-1807.2011.16.5.246861
Subject(s) - indium phosphide , zinc selenide , semiconductor , scanning electron microscope , etching (microfabrication) , materials science , indium , zinc , phosphide , chemical engineering , selenide , dispersion (optics) , porosity , optoelectronics , nanotechnology , optics , composite material , metallurgy , layer (electronics) , gallium arsenide , nickel , physics , selenium , engineering
The paper represent a methodology and mechanizm of obtaining porous layers in ZnSe and InP substrates by photoelectochemical etching in acid solutions. Morphology of the surface was investigated by using scanning electron microscopy. By using energy dispersion X-ray analysis method (EDAX) was determined chemical composition of the obtained film`s surface