Open AccessNanoheteroepitaxial structures with quantum dots obtained by liquid-phase epitaxy based on GaP
Author(s) -
S.V. Bondarec,
S.YU. Bykovskij,
I. E. Maronchuk,
И. И. Марончук,
A.N. Petrash,
S. Smirnov,
Д. Д. Саникович
Publication year - 2011
Publication title -
èlektronika i svâzʹ
Language(s) - English
Resource type - Journals
eISSN - 2312-1807
pISSN - 1811-4512
DOI - 10.20535/2312-1807.2011.16.4.242710
Subject(s) - quantum dot , epitaxy , heterojunction , materials science , substrate (aquarium) , photoluminescence , liquid phase , optoelectronics , phase (matter) , nanotechnology , chemistry , physics , oceanography , organic chemistry , layer (electronics) , geology , thermodynamics
A method of an obtaining of nanoheterostructures with arrays of quantum dots by a process of liquid phase epitaxy with a pulse cooling and a heating of substrate are described. Experimental results for a growing of heterostructures on a base of GaP with quantum dots Ge, InAs and for an investigation of parameters by the atomic-power microscopy and photoluminescence are presented.