
RESEARCH OF TRANSPORT PROPERTIES OF ELECTRONS IN NITRIDES INDIUM AND GALLIUM
Author(s) -
Tetiana Saurova,
Elena Semenovskaya,
Maksim Emelianov
Publication year - 2020
Publication title -
vìsnik kiïvsʹkogo polìtehnìčnogo ìnstitutu. serìâ priladobuduvannâ/vìsnik kiïvsʹkogo polìtehnìčnogo ìnstitutu. serìâ priladobuduvannâ
Language(s) - English
Resource type - Journals
eISSN - 2663-3450
pISSN - 0321-2211
DOI - 10.20535/1970.60(2).2020.221422
Subject(s) - indium gallium nitride , gallium , gallium nitride , indium , materials science , nitride , dopant , semiconductor , condensed matter physics , electron mobility , impurity , ionized impurity scattering , phonon , doping , optoelectronics , chemistry , physics , nanotechnology , metallurgy , organic chemistry , layer (electronics)