Open AccessStudy of J-V Characteristics of Microcrystalline Silicon Solar Cell on The Structure of P-I-N Homojunction
Author(s) -
Y N K Dewi,
Endhah Purwandari,
Khoirul Anwar,
Misto Misto
Publication year - 2020
Publication title -
computational and experimental research in materials and renewable energy
Language(s) - English
Resource type - Journals
ISSN - 2747-173X
DOI - 10.19184/cerimre.v3i1.26416
Subject(s) - homojunction , materials science , current density , amorphous silicon , amorphous solid , silicon , microcrystalline , charge density , open circuit voltage , voltage , phase (matter) , condensed matter physics , crystalline silicon , heterojunction , optoelectronics , crystallography , chemistry , electrical engineering , physics , quantum mechanics , organic chemistry , engineering
Microcrystalline silicon (μc-Si) is a silicon semiconductor material with a crystalline structure in the amorphous phase. Here, the transport phenomenon in this phase has been modeled to produce charge carrier distribution profile and current density-voltage characteristics. The calculations were obtained by solving Poisson and Continuity equations on crystal and amorphous materials which are modeled in one-dimensional p-i-n homojunction, using finite element method. The simulation results of the charge carrier distribution profile show that the highest electron concentration in the n-layer of 1018 cm-1, and the highest hole concentration in the p-layer of 1018 cm-1. The result current density-voltage (J-V) characteristics curve show that the open circuitt voltage of 0,6 volts and short-circuit current density of 26.4 mA/cm. The energy conversion efficiency of 9.02% with a fill factor of 0.569.