Open AccessBuilt in Potential of a-Si:H Based p-i-n Solar Cell at Different Energy Gap of Intrinsic Layer
Author(s) -
Rahayu Setyo Yuniarsih,
Endhah Purwandari,
Misto Misto,
Eko Supriyanto,
Supriyadi Supriyadi
Publication year - 2018
Publication title -
computational and experimental research in materials and renewable energy
Language(s) - English
Resource type - Journals
ISSN - 2747-173X
DOI - 10.19184/cerimre.v1i1.19547
Subject(s) - solar cell , band gap , theory of solar cells , diffusion , electric potential energy , photovoltaic system , electron , poisson's equation , electric potential , layer (electronics) , materials science , active layer , rectangular potential barrier , solar energy , optoelectronics , energy (signal processing) , physics , solar cell efficiency , nanotechnology , quantum mechanics , electrical engineering , voltage , engineering , thin film transistor
The photovoltaic process inside a solar cell can be described using the distribution of electrostatic potential in the material. In this paper, the magnitude of the electrostatic potential of the solar cell for the p-i-n junction type is analyzed as the built in potential due to the diffusion activity of electrons and holes. The magnitude of the electrostatic potential is obtained by solving the Poisson and Continuity equations, which are applied to a-Si: H based materials. The difference in built in potential at the p-i and i-n junctions is obtained as a function of the energy gap of the intrinsic layer.