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Modeling of current—voltage characteristics for double‐gate a‐IGZO TFTs and its application to AMLCDs
Author(s) -
Baek Gwanghyeon,
Kanicki Jerzy
Publication year - 2012
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/jsid20.5.237
Subject(s) - thin film transistor , materials science , homojunction , optoelectronics , swing , subthreshold conduction , threshold voltage , nand gate , capacitance , voltage , saturation (graph theory) , computer science , electrical engineering , logic gate , electrode , transistor , nanotechnology , physics , engineering , mathematics , heterojunction , layer (electronics) , quantum mechanics , combinatorics , acoustics
— The equations for the transfer characteristics, subthreshold swing, and saturation voltage of double‐gate (DG) a‐IGZO TFTs, when the top‐ and bottom‐gate electrodes are connected together (synchronized), were developed. From these equations, it is found thatsynchronized DG a‐IGZO TFTs can be considered as conventional TFTs with a modified gate capacitance and threshold voltage. The developed models were compared with the top or bottom gate only bias conditions. The validity of the models is discussed by using the extracted TFT parameters for DG coplanar homojunction TFTs. Lastly, the new pixel circuit and layout based on a synchronized DG a‐IGZO TFT is introduced.