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A low‐cost low‐temperature thin‐film‐transistor backplane based on oxide semiconductor
Author(s) -
Lan Linfeng,
Xiong Nana,
Xiao Peng,
Shi Wen,
Xu Miao,
Xu Wei,
Yao Rihui,
Peng Junbiao
Publication year - 2012
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/jsid20.4.175
Subject(s) - thin film transistor , materials science , passivation , optoelectronics , oxide thin film transistor , photoresist , threshold voltage , transistor , luminance , field effect , backplane , diode , electrical engineering , voltage , layer (electronics) , optics , nanotechnology , physics , engineering
— An indium‐gallium‐zinc‐oxide (IGZO) thin‐film transistor (TFT) based on an anodized aluminum‐oxide gate dielectric and photoresist passivation has been fabricated. The TFT showed a field‐effect mobility of as high as 18 cm 2 /V‐sec and a threshold voltage of only 0.5 V. A 50 × 50 AMOLED display based on this type of TFT was designed and fabricated. The average luminance of the panel was 150 cd/m 2 , and the maximum pixel luminance was 900 cd/m 2 .