A low‐cost low‐temperature thin‐film‐transistor backplane based on oxide semiconductor | Zendy

Lan Linfeng | Zendy; Xiong Nana | Zendy; Xiao Peng | Zendy; Shi Wen | Zendy; Xu Miao | Zendy; Xu Wei | Zendy; Yao Rihui | Zendy; Peng Junbiao | Zendy

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A low‐cost low‐temperature thin‐film‐transistor backplane based on oxide semiconductor

Author(s) -

Lan Linfeng,

Xiong Nana,

Xiao Peng,

Shi Wen,

Xu Miao,

Xu Wei,

Yao Rihui,

Peng Junbiao

Publication year - 2012

Publication title -

journal of the society for information display

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.578

H-Index - 52

eISSN - 1938-3657

pISSN - 1071-0922

DOI - 10.1889/jsid20.4.175

Subject(s) - thin film transistor , materials science , passivation , optoelectronics , oxide thin film transistor , photoresist , threshold voltage , transistor , luminance , field effect , backplane , diode , electrical engineering , voltage , layer (electronics) , optics , nanotechnology , physics , engineering

— An indium‐gallium‐zinc‐oxide (IGZO) thin‐film transistor (TFT) based on an anodized aluminum‐oxide gate dielectric and photoresist passivation has been fabricated. The TFT showed a field‐effect mobility of as high as 18 cm 2 /V‐sec and a threshold voltage of only 0.5 V. A 50 × 50 AMOLED display based on this type of TFT was designed and fabricated. The average luminance of the panel was 150 cd/m 2 , and the maximum pixel luminance was 900 cd/m 2 .

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