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Solution‐processed oxide thin‐film transistors using aluminum and nitrate precursors for low‐temperature annealing
Author(s) -
Jeong Woong Hee,
Bae Jung Hyeon,
Kim Kyung Min,
Kim Dong Lim,
Rim You Seung,
Kim Si Joon,
Park KyungBae,
Seon JongBaek,
Ryu MyungKwan,
Kim Hyun Jae
Publication year - 2011
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/jsid19.9.620
Subject(s) - thin film transistor , materials science , annealing (glass) , oxide , thin film , oxide thin film transistor , alloy , chemical engineering , metal , aluminium , optoelectronics , inorganic chemistry , nanotechnology , composite material , metallurgy , chemistry , layer (electronics) , engineering
— In this article, a solution process for oxide thin‐film transistors (TFTs) at low‐temperature annealing was investigated. Solution‐process engineering, including materials and precursors, plays an important role in oxide thin‐film deposition on large glass and flexible substrates at low temperature. Reactive material could reduce the alloy reaction temperature for a multicomponent oxide system. A volatile precursor could also reduce annealing temperature in the formation of metal‐oxide thin films. A solution process with reactive Al and a volatile nitrate precursor can demonstrates competitive oxide TFTs at 350°C.