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Surface‐light‐emitting transistors based on vertical‐type metal‐base organic transistors
Author(s) -
Nakayama Kenichi,
Pu YongJin,
Kido Junji
Publication year - 2011
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/jsid19.9.602
Subject(s) - oled , materials science , optoelectronics , thin film transistor , transistor , luminance , diode , threshold voltage , backplane , layer (electronics) , voltage , optics , electrical engineering , nanotechnology , physics , engineering
— Light‐emitting transistors having a metal‐base organic transistor (MBOT) structure demonstrate both the function of an organic thin‐film transistor (OTFT) and organic light‐emitting diode (OLED). The MBOT is a vertical‐type organic transistor having a simple structure composed of organic/metal/organic layers demonstrating high‐current and low‐voltage operation. The light‐emitting MBOT was fabricated simply by inserting additional layers of hole‐transporting and emissive materials used in the OLED into the col lector layer. The device showed perfect surface emission similar to an OLED. A luminance modulation of 370 cd/m 2 was observed at a collector voltage of 20 V and a base voltage of 3 V. This device can be applied to an OLED display device to increase the numerical aperture or reduce the required current of the TFT backplane.