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Memory effects of all‐solution‐processed oxide thin‐film transistors using ZnO nanoparticles
Author(s) -
Bae Jung Hyeon,
Kim Gun Hee,
Jeong Woong Hee,
Kim Hyun Jae
Publication year - 2011
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/jsid19.5.404
Subject(s) - materials science , thin film transistor , trapping , transistor , optoelectronics , non volatile memory , nanoparticle , electrode , hysteresis , layer (electronics) , threshold voltage , dielectric , insulator (electricity) , nanotechnology , voltage , electrical engineering , chemistry , engineering , biology , ecology , physics , quantum mechanics
— Non‐volatile memory effects of an all‐solution‐processed oxide thin‐film transistor (TFT) with ZnO nanoparticles (NPs) as the charge‐trapping layer are reported. The device was fabricated by using a soluble MgInZnO active channel on a ZrHfO x gate dielectric. ZnO NPs were used as the charge‐trapping site at the gate‐insulator—channel interface, and Al was used for source and drain electrodes. Transfer characteristics of the device showed a large clockwise hysteresis, which can be used to demonstrate its memory function due to electron trapping in the ZnO NP charge‐trapping layer. This memory effect has the potential to be utilized as a memory application on displays and disposable electronics.