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Study on wet patterning of thin films in vertical‐transfer wet station for thin‐film‐transistor manufacturing
Author(s) -
Lee SangHyuk,
Park InSun,
Choe Hee Hwan,
Hong MunPyo,
Seo Jong Hyun,
Kim Palgon
Publication year - 2011
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/jsid19.5.380
Subject(s) - materials science , tilt (camera) , etching (microfabrication) , substrate (aquarium) , thin film , thin film transistor , layer (electronics) , dry etching , optoelectronics , composite material , optics , nanotechnology , mechanical engineering , geology , physics , oceanography , engineering
— To overcome the “pseudo‐puddling effect” in a low‐angle‐tilt transfer system with an oversized glass substrate over 2 m, a vertical transfer is suggested. The aim of the present work is to study the wet‐etching behavior of an aluminum/molybdenum double layer deposited on the glass substrate in a vertical transfer wet etching system and compare it with a typical 5°‐tilt‐transfer system. Compared with the tilt‐transfer wet station, the vertical etching system has three advantages, namely, 50% space savings, higher throughput due to the high etch rate, and good etch uniformity over the entire glass for thin‐film‐transistor application. The computational fluid‐dynamics analysis is used to predict the change of the etch uniformity as a function of the tilt angle of the glass substrate.