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Solution‐processable double‐layered ionic p‐i‐n organic light‐emitting diodes
Author(s) -
Park Byoungchoo,
Huh Yoon Ho,
Park Jongwoon,
Lee Sang Woo,
Han Woo Tack,
Park Yung Jin,
Kim In Tae
Publication year - 2011
Publication title -
journal of the society for information display
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.578
H-Index - 52
eISSN - 1938-3657
pISSN - 1071-0922
DOI - 10.1889/jsid19.4.342
Subject(s) - oled , phosphor , materials science , diode , optoelectronics , doping , ionic bonding , brightness , layer (electronics) , thermal , double layer (biology) , optics , ion , chemistry , nanotechnology , organic chemistry , meteorology , physics
— Solution‐processed double‐layered ionic p‐i‐n organic light‐emitting diodes (OLEDs), comprised of an emitting material layer doped with an organometallic green phosphor and a photo‐cross‐linked hole‐transporting layer doped with photo‐initiator is reported. The fabricated OLEDs were annealed using simultaneous thermal and electrical treatments to form a double‐layered ionic p‐i‐n structure. As a result, an annealed double‐layered OLED with a peak brightness over 20,000 cd/m 2 (20 V, 390 mA/cm 2 ) and a peak efficiency of 15 cd/A (6 V, 210 cd/m 2 ) was achieved.